PhD position in Fast Atomic Layer Deposition (fast-ALD) of Transparent Conductive Oxides
CEA Tech
France

JOB DETAILS
Title PhD position - Fast Atomic Layer Deposition (fast-ALD) of Transparent Conductive Oxides
Employer CEA Tech
Job location 17 rue des martyrs, F-38054 Grenoble
Published August 24, 2019
Application deadline October 31, 2019
Job types PhD
Fields Optics, Solid-state Chemistry, Optical Engineering, Atomic, Molecular and Optical Physics, Solid-state Physics, Electrical Engineering, Electronics



JOB DESCRIPTION

SL-DRT-19-1086

RESEARCH FIELD
Electronics and microelectronics - Optoelectronics

ABSTRACT
The PhD project plans to work on optimization and understanding of fast-ALD (Atomic Layer Deposition) processes, made in a dedicated fast deposition reactor (not spatial) developed by the French company Encapsulix, for the deposition of Transparent Conductive Oxides (TCOs).The ALD deposition technology allows the deposition of thin layers of inorganic materials with a digital control of thickness, high optical quality and conformality. Traditionally, ALD primary use has been focusing on micro/nanoelectronic applications, for very thin layers, e.g. < 10 nm, because the nominal deposition rate of standard ALD tools is relatively low, 1 Å / min. The French company Encapsulix introduced the Parallel Precursor Wave (PPW) reactor architecture few years ago, which increases the deposition rate by more than an order of magnitude (12 Å / min). The CEA-LETI institute acquired an Infinity 200 fast-ALD tool at the end of 2015. It is used today for organic electronics, mainly for thin-film encapsulation of OLED using Al2O3 material.Besides Al2O3, some preliminary deposition tests of TCOs like ZnO or AZO (ZnO: Al) materials by fast-ALD have been realized recently but they show limitations to achieve optimal physical properties of the TCOs, compared to conventional "low speed" ALD. In the case of AZO, it has been noticed some doping issues leading to AZO thin films that were far more resistive than AZO films deposited in standard ALD tools (not fast). We suspect that doping is impacted by the fast-ALD process itself. Similar observations were reported recently by a team from UNCC University (USA) working on a spatial fast-ALD technology . The first part of the PhD work will be to understand physical mechanisms involved in the solid state doping of binary TCO compounds like AZO deposited by fast-ALD. In addition to ZnO and AZO materials, the PhD student will implement and study fast-ALD deposition of SnO2. The advantage of SnO2 over ZnO compounds is a greater stability in microfabrication processes as well as a better stability under humidity storage. Mastering the deposition of this oxide in a fast-ALD tool is therefore a competitive advantage for some dedicated applications in photonics.A second part of the PhD work will consist on the study of the area selective deposition (ASD) of these TCOs. This will be made thanks to the use of Self-Assembled Monolayers (SAMs) that can be deposited in the vapor phase by a dedicated process (Molecular Vapor Deposition tool available at CEA-LETI). Study of ASD technology is today mainstream in microelectronics, for the fabrication of gate oxides for advanced transistor nodes (< 10 nm). There are opportunities for ASD diversification towards non-micro/nanoelectronic applications, e.g. optoelectronics/photonics, and towards the realization of selective deposition of micro-patterned, or even macro-patterned TCO films. This is therefore a very innovative point in this PhD project. CEA-LETI will rely on the expertise of the LTM in terms of ASD to carry out its tests.The French institute CEA-LETI is a key player in research, development and innovation in four main areas: defense and security, low carbon energies (nuclear and renewable energies), technological research for industry, fundamental research in the physical sciences and life sciences. Drawing on its widely acknowledged expertise, the CEA-LETI actively participates in collaborative projects with a large number of academic and industrial partners.

LOCATION
Département d'Optronique (LETI)

Laboratoire des Composants Emissifs

Grenoble

CONTACT PERSON
MAINDRON tony

CEA

DRT/DOPT//LCEM

17 rue des martyrs 38054 grenoble

Phone number: 0438782671

Email: tony.maindron@cea.fr

START DATE
Start date on 01-10-2019

THESIS SUPERVISOR
VALLÉE Christophe

LTM/CNRS

LTM/CNRS

CNRS/LTMCEA Grenoble17 rue des martyrs38054 Grenoble cedex 9

Phone number: 04.38.78.17.23

Email: christophe.vallee@cea.fr

« The age limit is 26 years for PhD offers and 30 years old for post-doc offers. »


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